TYPICAL PERFORMANCE CURVES
®
APT200GN60JDQ4
600V
APT200GN60JDQ4
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses
E
G
C
E
SO
2
T-
27
•
•
•
•
•
•
600V Field Stop
ISOTOP
®
"UL Recognized"
file # E145592
Trench Gate: Low V
CE(on)
Easy Paralleling
5µs Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
175°C Rated
C
G
E
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT200GN60JDQ4
UNIT
Volts
600
±20
283
158
600
600A @600V
682
-55 to 175
Amps
Switching Safe Operating Area @ T
J
= 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 3.2mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
5
1.05
5.8
1.45
1.65
1.15
1.19
50
2
6.5
1.85
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 25°C)
V
CE(ON)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 200A, T
j
= 125°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 125°C)
I
CES
I
GES
R
GINT
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
µA
nA
Ω
3-2005
050-7611
Rev B
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
TBD
600
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
