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APT20GT60BR 参数 Datasheet PDF下载

APT20GT60BR图片预览
型号: APT20GT60BR
PDF下载: 下载PDF文件 查看货源
内容描述: 迅雷IGBT⑩是新一代高压功率IGBT的。 [The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.]
分类和应用: 双极性晶体管高压
文件页数/大小: 5 页 / 152 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APT20GT60BR  
40  
30  
40  
V
=15, 10 & 9V  
V
=15, 10 & 9V  
GE  
GE  
8V  
7V  
8V  
7V  
30  
20  
10  
20  
10  
0
6V  
5V  
6V  
5V  
0
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)  
V
CE  
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)  
CE  
Figure 1, Typical Output Characteristics (T = 25°C)  
Figure 2, Typical Output Characteristics (T = 150°C)  
J
J
60  
80  
OPERATION  
LIMITED  
250µSec.PulseTest  
V
=15V  
BY  
GE  
V
(SAT)  
CE  
50  
40  
30  
20  
10  
0
T =-55°C  
C
100µS  
T =+25°C  
C
T =+150°C  
C
10  
5
1mS  
T
=+25°C  
C
T =+150°C  
J
SINGLE PULSE  
10mS  
1
0
1
2
3
4
5
1
5
10  
50 100  
600  
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)  
V
CE  
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)  
CE  
Figure 3, Typical Output Characteristics @ V  
= 15V  
Figure 4, Maximum Forward Safe Operating Area  
GE  
20  
3,000  
I
= I  
C
C2  
T
=+25°C  
J
C
V
=120V  
ies  
CE  
1,000  
16  
12  
8
500  
V
=300V  
CE  
f = 1MHz  
V
=480V  
CE  
C
oes  
100  
C
res  
50  
4
10  
0
0.01  
0.1  
1.0  
10  
50  
0
40  
80  
120  
160  
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)  
Q , TOTAL GATE CHARGE (nC)  
CE  
g
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage  
Figure 6, Gate Charges vs Gate-To-Emitter Voltage  
1.0  
0.5  
D=0.5  
0.2  
0.1  
0.1  
0.05  
0.05  
Note:  
0.02  
0.01  
t
1
0.01  
t
2
0.005  
SINGLE PULSE  
t
1
Duty Factor D =  
Peak T = P x Z  
/
t
2
+ T  
J
DM  
θJC  
C
0.001  
10-5  
10-4  
10-3  
10-2  
10-1  
1.0  
10  
RECTANGULAR PULSE DURATION (SECONDS)  
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration