415
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
100µS
APT20M20JLL
Ciss
I
D
, DRAIN CURRENT (AMPERES)
100
C, CAPACITANCE (pF)
Coss
1,000
1mS
10
10mS
100
Crss
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100 200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 75A
200
100
TJ =+150°C
TJ =+25°C
12
VDS=40V
VDS=100V
VDS=160V
8
10
4
40 60 80 100 120 140 160 180
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
90
80
70
t
d(off)
V
DD
G
0
0
20
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
140
120
V
DD
G
= 130V
R
= 5Ω
T = 125°C
J
L = 100µH
t
d(on)
and t
d(off)
(ns)
60
50
40
30
20
10
0
20
= 130V
R
= 5Ω
t
r
and t
f
(ns)
100
80
60
40
20
t
f
t
r
T = 125°C
J
L = 100µH
t
d(on)
80
100
120
140
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
40
60
80
100
120
140
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
0
20
40
60
1400
= 130V
1200
SWITCHING ENERGY (µJ)
R
= 5Ω
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
1000
800
600
SWITCHING ENERGY (µJ)
J
2000
E
off
1500
E
on
1000
V
I
DD
4-2004
E
on
400
200
0
20
= 130V
D
J
= 100A
500
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7021 Rev D
E
off
40
60
0
0
5
80
100
120
140
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
ADPOW [ ADVANCED POWER TECHNOLOGY ]
