TYPICAL PERFORMANCE CURVES
®
1200V
APT20GF120B_SRDQ1(G)
APT20GF120BRDQ1
APT20GF120SRDQ1
APT20GF120BRDQ1G* APT20GF120SRDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop
• RBSOA and SCSOA Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
G
C
E
(B)
TO
-2
47
D
3
PAK
C
G
E
(S)
• Ultrafast Soft Recovery Anti-parallel Diode
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 100°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT20GF120B_SRDQ1(G)
UNIT
Volts
1200
±30
36
20
64
64A @ 1200V
200
-55 to 150
300
Amps
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 600µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 600µA, T
j
= 25°C)
MIN
TYP
MAX
Units
1200
4.5
5.5
2.7
3.3
1
2
2
6.5
3.2
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
Volts
I
CES
I
GES
mA
nA
10-2005
052-6279
Rev A
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
6
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
