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APT25GP120BDQ1G 参数 Datasheet PDF下载

APT25GP120BDQ1G图片预览
型号: APT25GP120BDQ1G
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 9 页 / 212 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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16
t
d(ON)
, TURN-ON DELAY TIME (ns)
14
12
10
8
6
4
2
0
V
CE
= 600V
T
J
= 25°C
,
T
J
=125°C
R
G
= 5Ω
L = 100µH
140
t
d (OFF)
, TURN-OFF DELAY TIME (ns)
V
GE
= 15V
120
100
80
60
40
20
V
CE
=
600V
R
G
=
5Ω
V
GE
=15V,T
J
=125°C
APT25GP120BDQ1(G)
V
GE
=15V,T
J
=25°C
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
35
30
25
20
15
10
5
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
600V
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
100
t
f,
FALL TIME (ns)
80
60
40
20
0
T
J
=
25°C, V
GE
=
15V
0
L = 100 µH
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
600V
t
r,
RISE TIME (ns)
T
J
=
125°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3500
E
ON2
, TURN ON ENERGY LOSS (µJ)
3000
2500
2000
1500
1000
500
0
E
OFF
, TURN OFF ENERGY LOSS (µJ)
V
= 600V
CE
V
= +15V
GE
R = 5Ω
G
0
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2500
V
= 600V
CE
V
= +15V
GE
R = 5Ω
G
T
J
=
125°C,V
GE
=
15V
2000
T
J
=
125°C, V
GE
=
15V
1500
1000
500
T
J
=
25°C, V
GE
=
15V
T
J
=
25°C,V
GE
=
15V
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
4500
SWITCHING ENERGY LOSSES (µJ)
4000
3500
3000
2500
2000
1500
1000
500
0
E
off,
12.5A
E
off,
25A
E
on2,
12.5A
E
on2,
25A
E
off,
50A
V
= 600V
CE
V
= +15V
GE
T = 125°C
J
10 15 20 25 30 35 40 45 50 55
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
3500
SWITCHING ENERGY LOSSES (µJ)
3000
2500
2000
1500
1000
500
0
E
on2,
12.5A
E
off,
12.5A
E
off,
50A
E
off,
25A
E
on2,
25A
V
= 600V
CE
V
= +15V
GE
R = 5Ω
G
0
E
on2,
50A
E
on2,
50A
Rev A
6-2005
050-7457
10
20
30
40
50
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0