APT25GP120B
1200V
POWER MOS 7 IGBT
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7
®
IGBT provides a lower cost alternative to a Power
MOSFET.
TO-247
®
G
C
E
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
• 100 kHz operation @ 800V,11A
• 50 kHz operation @ 800V, 19A
• RBSOA Rated
G
C
E
All Ratings: T
C
= 25°C unless otherwise specified.
APT25GP120B
UNIT
1200
±20
±30
69
33
90
90A @ 960V
417
-55 to 150
300
Watts
°C
Amps
Volts
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 25°C
Reverse Bias Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
1200
3
4.5
3.3
3.0
250
2
6
3.9
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
I
CES
I
GES
µA
nA
4-2003
050-7411
Rev B
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
2500
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
