TYPICAL PERFORMANCE CURVES
®
APT30GT60BRDQ2
APT30GT60BRDQ2G*
APT30GT60BRDQ2(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT
®
The Thunderblot IGBT
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT
®
offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• High Freq. Switching to 100KHz
• Ultra Low Leakage Current
G
TO
-2
47
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT30GT60BRDQ2(G)
UNIT
Volts
600
±30
64
30
110
110A @ 600V
250
-55 to 150
300
Amps
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
MIN
TYP
MAX
Units
600
3
1.6
4
2.0
2.8
50
2
5
2.5
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 30A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 30A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Volts
I
CES
I
GES
µA
nA
12-2005
052-6282
Rev A
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
1000
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
