DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT30GT60KR
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
Resistive Switching (25
°
C)
V
GE
= 15V
I
C
= I
C2
V
CC
= 0.8V
CES
R
G
= 10Ω
I
C
= I
C2
MIN
TYP
MAX
UNIT
1600
155
90
140
60
12
14
55
190
140
18
30
300
25
0.5
1.2
1.7
mJ
ns
ns
nC
pF
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
IM
EL
Inductive Switching (150
°
C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
T
J
= +150°C
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
PR
Inductive Switching (25
°
C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
IN
A
RY
6
MIN
18
30
260
20
1.3
mJ
S
ns
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
THERMAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘJA
Torque
1
2
3
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
TYP
MAX
UNIT
°C/W
lb•in
.5
40
10
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
, V
CC
= 50V, R
GE
= 25
Ω,
L = 100µH, T
j
= 25°C
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6204 Rev C
ADPOW [ ADVANCED POWER TECHNOLOGY ]
