APT33GF120BR
1200V
52A
APT33GF120BR
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
TO-247
• Low Forward Voltage Drop
• Ultra Low Leakage Current
• Low Tail Current
• RBSOA and SCSOA Rated
• High Freq. Switching to 20KHz
G
C
C
E
G
E
MAXIMUM RATINGS (IGBT)
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20KΩ)
Gate Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 105°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT33GF120BR
UNIT
1200
1200
±20
52
33
Amps
Volts
@ T
C
= 25°C
104
66
65
297
-55 to 150
300
°C
RBSOA Clamped Inductive Load Current @ R
G
= 11Ω T
C
= 125 °C
Single Pule Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
2
m
J
Watts
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
1200
4.5
5.5
2.7
3.3
6.5
3.2
3.9
0.5
3-2003
052-6206 Rev D
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
I
CES
I
GES
5.0
±100
mA
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
