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APT35GN120BG 参数 Datasheet PDF下载

APT35GN120BG图片预览
型号: APT35GN120BG
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT [IGBT]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 6 页 / 185 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
®
APT35GN120B
APT35GN120BG*
APT35GN120B(G)
1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior V
CE(on)
performance. Easy paralleling results from very tight
parameter distribution and slightly positive V
CE(on)
temperature coefficient. Built-in
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
TO
-2
47
G
C
E
1200V NPT Field Stop
Trench Gate: Low V
CE(on)
Easy Paralleling
10µs Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT35GN120B(G)
UNIT
Volts
1200
±30
94
46
105
105A @ 1200V
379
-55 to 150
300
Amps
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
Units
1200
5
1.4
2
2
5.8
1.7
1.9
6.5
2.1
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 35A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 35A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
Volts
I
CES
I
GES
R
GINT
100
TBD
600
6
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7601
Rev C
10-2005
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
µA