APT47N60BC3
APT47N60SC3
600V 47A 0.070
Ω
D
3
PAK
Super Junction MOSFET
TO-247
C OLMOS
O
Power Semiconductors
• Ultra low R
DS
(
ON
)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q
g
• Avalanche Energy Rated
• TO-247 or Surface Mount D
3
PAK Package
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
dv
/
dt
D
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT47N60BC3_SC3
UNIT
Volts
Amps
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
600
47
141
±20
±30
417
3.33
-55 to 150
260
50
20
1
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS
= 480V, I
D
= 47A, T
J
= 125°C)
Repetitive Avalanche Current
Repetitive Avalanche Energy
7
7
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
I
AR
E
AR
E
AS
Single Pulse Avalanche Energy
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
600
0.06
0.5
0.07
25
250
±100
2.10
3
3.9
(V
GS
= 10V, I
D
= 30A)
Ohms
µA
nA
Volts
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V, T
J
= 150°C)
Gate-Source Leakage Current (V
GS
= ±20V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.7mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS
™
comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
050-7144 Rev E
4-2004
ADPOW [ ADVANCED POWER TECHNOLOGY ]
