DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT47N60BC3_SC3
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 47A @ 25°C
RESISTIVE SWITCHING
V
GS
= 13V
V
DD
= 380V
I
D
= 47A @ 125°C
R
G
= 1.8Ω
6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 400V, V
GS
= 15V
I
D
= 47A, R
G
= 5Ω
6
INDUCTIVE SWITCHING @ 125°C
V
DD
= 400V V
GS
= 15V
I
D
= 47A, R
G
= 5Ω
MIN
TYP
MAX
UNIT
7015
2565
210
260
29
110
18
27
110
8
670
980
1100
1200
MIN
TYP
MAX
UNIT
Amps
Volts
ns
µC
nC
pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
ns
µ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
2
47
141
1.2
580
23
6
MIN
TYP
MAX
(Body Diode)
(V
GS
= 0V, I
S
= -
47A
)
Reverse Recovery Time (I
S
= -
47A
, dl
S
/dt = 100A/µs, V
R
= 350V)
Reverse Recovery Charge (I
S
= -
47A
, dl
S
/dt = 100A/µs, V
R
= 350V)
Peak Diode Recovery
dv
/
dt
5
V/ns
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
UNIT
°C/W
0.30
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
4 Starting T
j
= +25°C, L = 36.0mH, R
G
= 25Ω, Peak I
L
= 10A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
47A
di
/
dt
≤
700A/µs
VR
≤
VDSS TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as
P
AV
=E
AR
*f
0.30
0.25
0.9
0.7
0.20
0.15
0.10
0.05
0
0.5
0.3
SINGLE PULSE
0.1
0.05
10
-5
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
1.0
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-7144 Rev E
4-2004
ADPOW [ ADVANCED POWER TECHNOLOGY ]
