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APT5010JN 参数 Datasheet PDF下载

APT5010JN图片预览
型号: APT5010JN
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压局域网高电压电源
文件页数/大小: 4 页 / 64 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APT5010/5012JN
300
I
D
, DRAIN CURRENT (AMPERES)
100
50
APT5010JN
APT5012JN
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10µS
10,000
100µS
C, CAPACITANCE (pF)
5,000
Coss
1,000
500
Crss
1mS
Ciss
APT5010JN
APT5012JN
10
5
10mS
100mS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
DC
.1
1
5 10
50 100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
.1
.5
1
5
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
200
100
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
VDS=100V
VDS=250V
16
160
12
VDS=400V
8
120
TJ =+150°C
80
4
40
TJ =+25°C
TJ =-55°C
100
200
300
400
500
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
0.4
0.8
1.2
1.6
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
0
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP
®
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
1.95 (.077)
2.14 (.084)
* Source
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
050-5037 Rev F
Gate
Dimensions in Millimeters and (Inches)
ISOTOP
®
is a Registered Trademark of SGS Thomson.