Typical Performance Curves
120
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10,000
5,000
APT5016BLL - SLL
Ciss
C, CAPACITANCE (pF)
1,000
Coss
100µS
10
100
Crss
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10mS
1
5 10
50 100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = 30
D
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
10
16
14
12
10
8
6
4
2
200
100
50
TJ =+150°C
TJ =+25°C
VDS=100V
VDS=250V
VDS=400V
10
5
10 20 30 40 50 60 70 80 90 100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
60
t
d(off)
50
t
d(on)
and t
d(off)
(ns)
0
0
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
V
DD
G
= 333V
R
= 5Ω
50
T = 125°C
J
L = 100µH
40
V
DD
G
= 333V
40
t
r
and t
f
(ns)
t
f
R
= 5Ω
30
20
T = 125°C
J
L = 100µH
30
20
10
0
0
10
t
d(on)
10
0
20
30
40
50
t
r
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
1000
V
DD
G
30
40
50
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
1000
SWITCHING ENERGY (µJ)
V
I
DD
0
10
20
= 333V
= 333V
R
= 5Ω
D
J
= 30A
T = 125°C
SWITCHING ENERGY (µJ)
800
J
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
E
off
L = 100µH
E
ON
includes
diode reverse recovery.
800
600
600
E
on
400
E
on
11-2003
400
200
E
off
200
0
050-7005 Rev C
0
0
10
20
30
40
50
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
ADPOW [ ADVANCED POWER TECHNOLOGY ]
