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APT5024BFLL 参数 Datasheet PDF下载

APT5024BFLL图片预览
型号: APT5024BFLL
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。 [Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 2 页 / 75 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT5024BFLL的Datasheet PDF文件第2页  
APT5024BFLL
APT5024SFLL
500V 22A 0.240
W
BFLL
D
3
PAK
TO-247
POWER MOS 7
TM
FREDFET
Power MOS 7
TM
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D
3
PAK Package
FAST RECOVERY BODY DIODE
D
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT5024
UNIT
Volts
Amps
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L
A
IC
N
H
EC ION
T T
E A
C M
N R
A O
V F
D N
A
I
500
22
88
±30
±40
265
2.12
300
22
30
(Repetitive and Non-Repetitive)
1
4
Volts
Watts
W/°C
°C
Amps
mJ
-55 to 150
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
500
22
0.240
250
1000
±100
3
5
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
nA
Volts
10-2001
050-7131
Rev -
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61