DYNAMIC CHARACTERISTICS (IGBT)
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT50GF60B2RD/LRD
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
Resistive Switching (25
°
C)
V
GE
= 15V
I
C
= I
C2
V
CC
= .8V
CES
I
C
= I
C2
MIN
TYP
MAX
UNIT
2600
475
165
170
25
100
20
100
160
200
30
90
290
170
2.2
2.4
4.6
3600
710
250
225
45
140
nC
pF
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
RY
6
MIN
ns
IN
R
G
= 10Ω
A
50
135
435
340
ns
EL
IM
4
Inductive Switching (150
°
C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
T
J
= +150°C
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
4
mJ
PR
Inductive Switching (25
°
C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
30
90
260
100
4.3
mJ
S
ns
Turn-off Delay Time
Fall Time
Total Switching Losses
4
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
Forward Transconductance
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
R
ΘJC
R
ΘJA
W
T
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
TYP
MAX
UNIT
0.42
0.66
40
0.22
oz
gm
°C/W
Package Weight
6.1
10
lb•in
N•m
Torque
1
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1.1
052-6253 Rev A
Repetitive Rating: Pulse width limited by maximum junction temperature.
Leakages include the FRED and IGBT.
See MIL-STD-750 Method 3471
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
2
3
4
ADPOW [ ADVANCED POWER TECHNOLOGY ]
