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APT50M50JLC 参数 Datasheet PDF下载

APT50M50JLC图片预览
型号: APT50M50JLC
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS VITM是新一代的低栅电荷,高电压N沟道增强模式功率MOSFET。 [Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 2 页 / 39 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT50M50JLC的Datasheet PDF文件第2页  
APT50M50JLC
500V
77A 0.050
W
S
G
D
S
POWER MOS VI
TM
Power MOS VI
TM
is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
iss
and C
rss
.
Lower gate charge coupled with Power MOS VI
TM
optimized gate layout,
delivers exceptionally fast switching speeds.
• Lower Gate Charge
• Faster Switching
• 100% Avalanche Tested
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
S
ISOTOP
®
T-
O
27
2
"UL Recognized"
• Lower Input Capacitance
• Easier To Drive
• Popular SOT-227 Package
D
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT50M50JLC
UNIT
Volts
Amps
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L
A
IC
N
H
EC ON
T I
ED AT
C
M
N
R
A
V
FO
D IN
A
500
77
308
±30
±40
700
5.6
-55 to 150
300
77
50
(Repetitive and Non-Repetitive)
1
4
Volts
Watts
W/°C
°C
Amps
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
500
77
0.050
100
500
±100
3
5
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
nA
Volts
050-5932 Rev - 12-99
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61