APT50M65JLL 参数 Datasheet PDF下载

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

APT50M65JLL

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 250V

I

D

= 67A @ 25°C

RESISTIVE SWITCHING

V

GS

= 15V

V

DD

= 250V

I

D

= 67A @ 25°C

R

G

= 0.6Ω

6

INDUCTIVE SWITCHING @ 25°C

V

DD

= 333V, V

GS

= 15V

I

D

= 67A, R

G

= 3Ω

6

INDUCTIVE SWITCHING @ 125°C

V

DD

= 333V, V

GS

= 15V

I

D

= 67A, R

G

= 3Ω

MIN

TYP

MAX

UNIT

7010

1390

87

141

40

70

12

28

29

30

1035

845

1556

1013

µ

J

ns

nC

pF

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy

Turn-off Switching Energy

Turn-on Switching Energy

Turn-off Switching Energy

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dv

/

dt

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

Diode Forward Voltage

1

2

MIN

TYP

MAX

UNIT

Amps

Volts

ns

µC

58

232

1.3

680

17.0

8

(Body Diode)

(V

GS

= 0V, I

S

= -

67A

)

Reverse Recovery Time (I

S

= -

67A

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -

67A

, dl

S

/dt = 100A/µs)

Peak Diode Recovery

dv

/

dt

5

V/ns

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

Characteristic

Junction to Case

Junction to Ambient

MIN

TYP

MAX

UNIT

°C/W

0.24

40

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting T

j

= +25°C, L = 1.78mH, R

G

= 25Ω, Peak I

L

= 58A

5

dv

/

dt

numbers reflect the limitations of the test circuit rather than the

device itself.

IS

≤

-

58A

di

/

dt

≤

700A/µs

VR

≤

500V

TJ

≤

150

°

C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.25

Z

JC

, THERMAL IMPEDANCE (°C/W)

θ

0.9

0.20

0.7

0.15

0.5

Note:

PDM

12-2003

0.10

0.3

0.05

0.1

0

0.05

10

-5

10

-4

SINGLE PULSE

t1

t2

050-7019 Rev D

Duty Factor D = t1/t

2

Peak TJ = PDM x Z

θJC

+ TC

10

-3

10

-2

10

-1

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

1.0