204
100
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
100µS
C, CAPACITANCE (pF)
APT50M75JFLL
Ciss
I
D
, DRAIN CURRENT (AMPERES)
1,000
Coss
10
1mS
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
100
Crss
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I = 51A
VDS=100V
D
VDS=250V
12
VDS=400V
8
1
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
10
TJ =+150°C
TJ =+25°C
10
4
40
80
120
160
200
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
100
90
80
t
d(on)
and t
d(off)
(ns)
0
0
1
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
110
V
DD
G
= 333V
R
= 5Ω
t
d(off)
V
DD
G
100
90
80
t
r
and t
f
(ns)
T = 125°C
J
L = 100µH
70
60
50
40
30
20
10
= 333V
t
f
R
= 5Ω
T = 125°C
J
70
60
50
40
30
20
10
t
r
L = 100µH
t
d(on)
1
10
50
60
70
80
90
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
20
30
40
50 60
70 80
90
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
2500
SWITCHING ENERGY (µJ)
V
I
DD
10
20
30
40
2500
= 333V
= 333V
R
= 5Ω
D
J
= 51A
SWITCHING ENERGY (µJ)
2000
T = 125°C
J
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery
L = 100µH
E
ON
includes
diode reverse recovery
E
on
E
off
2000
1500
1000
500
0
1500
1000
E
on
9-2004
500
050-7034 Rev D
E
off
50
60
70
80 90
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
10
20
30
40
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
ADPOW [ ADVANCED POWER TECHNOLOGY ]
