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APT50M80LLC 参数 Datasheet PDF下载

APT50M80LLC图片预览
型号: APT50M80LLC
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS VITM是新一代的低栅电荷,高电压N沟道增强模式功率MOSFET。 [Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 2 页 / 39 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT50M80LLC的Datasheet PDF文件第1页  
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT50M80 B2LC - LLC
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= 0.5 I
D[Cont.]
@ 25°C
V
GS
= 15V
MIN
TYP
MAX
UNIT
6060
1220
230
170
31
89
12
13
34
nC
pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
L
A
IC
N
H
EC ON
T I
D AT
E
C
M
N
R
A
O
V
D INF
A
V
DD
= 0.5 V
DSS
R
G
= 0.6W
I
D
= I
D[Cont.]
@ 25°C
ns
7.1
MIN
TYP
MAX
UNIT
Amps
Volts
ns
µC
(Body Diode)
58
232
1.3
(Body Diode)
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
680
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
17.0
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.20
40
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 1.78mH, R = 25W, Peak I = 58A
j
G
L
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Collector
Collector
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
rev- 12-99
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Gate
Collector
Emitter
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
050-5933
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058