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APT6010LLL 参数 Datasheet PDF下载

APT6010LLL图片预览
型号: APT6010LLL
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。 [Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 2 页 / 73 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT6010LLL的Datasheet PDF文件第1页  
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT6010 B2LL - LLL
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
MIN
TYP
MAX
UNIT
6795
1260
79
153
34
79
12
19
33
nC
pF
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
Diode Forward Voltage
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
Peak Diode Recovery
dv
/
dt
5
L
A
IC
N
H
EC ION
T T
E A
C M
N R
A O
V F
D N
A
I
V
DD
= 0.5 V
DSS
R
G
= 0.6W
I
D
= I
D[Cont.]
@ 25°C
ns
9.2
MIN
TYP
MAX
UNIT
Amps
Volts
ns
µC
54
216
1.3
(Body Diode)
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
770
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
17.5
8
V/ns
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.18
40
1
Repetitive Rating: Pulse width limited by maximum junction
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 2.05mH, R = 25W, Peak I = 54A
temperature.
j
G
L
2
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv
/
numbers reflect the limitations of the test circuit rather than the
dt
device itself.
IS
£
-
ID
[
Cont.
] di
/
dt
£
700A/µs
VR
£
VDSS TJ
£
150
°
C
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX
TM
(B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
Drain
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
050-7051 Rev A 10-2001
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058