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APT6030BN 参数 Datasheet PDF下载

APT6030BN图片预览
型号: APT6030BN
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲高压局域网高电压电源
文件页数/大小: 4 页 / 55 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT6030BN的Datasheet PDF文件第1页浏览型号APT6030BN的Datasheet PDF文件第2页浏览型号APT6030BN的Datasheet PDF文件第4页  
APT6030/6033BN
20
VGS=7, 8, &10V
I
D
, DRAIN CURRENT (AMPERES)
16
I
D
, DRAIN CURRENT (AMPERES)
6.5V
20
VGS=10V
8V
16
7V
6.5V
12
6V
12
6V
8
5.5V
4
5V
4.5V
0
50
100
150
200
250
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
40
TJ = -55°C
TJ = +25°C
TJ = +125°C
8
5.5V
4
5V
4.5V
0
2
4
6
8
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
2.50
I
D
, DRAIN CURRENT (AMPERES)
32
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
2.00
TJ = 25°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
= 10V @ 0.5 I [Cont.]
GS
D
24
1.50
VGS=10V
16
1.00
VGS=20V
8
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
24
I
D
, DRAIN CURRENT (AMPERES)
0
0.50
0
10
20
30
40
50
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
20
APT6030BN
APT6033BN
1.1
16
12
8
1.0
0.9
4
0.8
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
I = 0.5 I [Cont.]
D
D
0
25
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
0.7
-50
V
GS
= 10V
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6
050-6008 Rev B
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4
-50