DYNAMIC CHARACTERISTICS (IGBT)
APT60GF120JRD
Symbol
Test Conditions
MIN
TYP
MAX
9600
1100
630
UNIT
Characteristic
Capacitance
VGE = 0V
Cies
Coes
Cres
Qg
Input Capacitance
7200
790
420
690
55
Output Capacitance
Reverse Transfer Capacitance
pF
VCE = 25V
f = 1 MHz
3
Gate Charge
Total Gate Charge
VGE = 15V
Qge
Qgc
td(on)
tr
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
VCC = 0.5VCES
IC = IC2
390
60
Resistive Switching (25°C)
VGE = 15V
Y
205
295
210
55
VCC = 0.8VCES
IC = IC2
td(off)
tf
Turn-off Delay Time
Fall Time
RG = 5Ω
td(on)
Turn-on Delay Time
Rise Time
tr
td(off)
tf
130
750
80
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
ns
Turn-off Delay Time
Fall Time
VGE = 15V
IC = IC2
4
RG = 5Ω
Eon
Eoff
Ets
Turn-on Switching Energy
9
TJ = +150°C
Turn-off Switching Energy
10
mJ
ns
4
Total Switching Losses
19
Turn-on Delay Time
td(on)
tr
55
Inductive Switching (25°C)
V
(Peak) = 0.66V
PRELIMINAR
CLAMP
CES
Rise Time
145
650
70
VGE = 15V
IC = IC2
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 5Ω
TJ = +25°C
4
Ets
17
mJ
S
Total Switching Losses
Forward Transconductance
gfe
VCE = 20V, IC = IC2
6
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.24
0.66
40
Junction to Case (IGBT)
RΘJC
Junction to Case (FRED)
°C/W
Junction to Ambient
Package Weight
RΘJA
WT
1.03
29.2
oz
gm
10
lb•in
N•m
Torque
Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
1.1
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
Leakages include the FRED and IGBT.
See MIL-STD-750 Method 3471
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
ADPOW [ ADVANCED POWER TECHNOLOGY ]
