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APT60GT60JR 参数 Datasheet PDF下载

APT60GT60JR图片预览
型号: APT60GT60JR
PDF下载: 下载PDF文件 查看货源
内容描述: 迅雷IGBT⑩是新一代高压功率IGBT的。 [The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.]
分类和应用: 晶体晶体管功率控制双极性晶体管高压局域网
文件页数/大小: 2 页 / 35 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT60GT60JR的Datasheet PDF文件第2页  
APT60GT60JR
600V
90A
E
C
Thunderbolt IGBT
™
The Thunderbolt IGBT
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
E
G
OT
S
C
2
-2
7
"UL Recognized"
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
MAXIMUM RATINGS
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
• High Freq. Switching to 150KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
ISOTOP
®
G
E
All Ratings: T
C
= 25°C unless otherwise specified.
APT60GT60JR
UNIT
600
600
15
±20
90
60
180
120
65
375
-55 to 150
300
°C
mJ
Watts
Amps
Volts
Collector-Gate Voltage (R
GE
= 20KW)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 95°C
Pulsed Collector Current
Pulsed Collector Current
1
1
@ T
C
= 25°C
@ T
C
= 95°C
2
Single Pulse Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA, T
j
= -55°C)
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
-15
3
1.6
4
2.0
5
2.5
2.8
80
052-6221 Rev A 9-2000
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 150°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 150°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
I
CES
I
GES
2000
±100
µA
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61