600V
16A
0.40Ω
Ω
APT6040BVFR
*
G
APT6040SVFR
APT6040BVFRG*APT6040SVFRG*
Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V
®
FREDFET
BVFR
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
D
3
PAK
TO-247
SVFR
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
•
FAST RECOVERY BODY DIODE
G
S
D
•
TO-247 or Surface Mount D
3
PAK Package
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT6040B_SVFR(G)
UNIT
Volts
Amps
600
16
64
±30
±40
250
2.0
-55 to 150
300
16
30
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
600
0.400
250
1000
±100
2
4
(V
GS
= 10V, I
D
= 8A)
Ohms
µA
nA
Volts
3-2006
050-7270 Rev B
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 480V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
