TYPICAL PERFORMANCE CURVES
®
APT75GN60B
APT75GN60BG*
APT75GN60B(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
TO
-2
47
G
C
E
•
•
•
•
•
600V Field Stop
Trench Gate: Low V
CE(on)
Easy Paralleling
6µs Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
8
All Ratings: T
C
= 25°C unless otherwise specified.
APT75GN60B(G)
UNIT
Volts
600
±30
@ T
C
= 25°C
155
93
225
225A @ 600V
536
-55 to 175
300
Watts
°C
Amps
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
Units
600
5.0
1.05
5.8
1.45
1.87
25
2
6.5
1.85
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 75A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 75A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Volts
I
CES
I
GES
R
G(int)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
µA
nA
Ω
9-2005
050-7619
Rev A
TBD
600
4
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
