APT75GP120J
1200V
POWER MOS 7 IGBT
G
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
®
®
E
C
E
OT
S
2
-2
7
"UL Recognized"
ISOTOP
®
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 50 kHz operation @ 800V, 20A
• 20 kHz operation @ 800V, 44A
• RBSOA rated
G
C
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT75GP120J
UNIT
1200
±20
±30
128
57
300
300A @ 960V
543
-55 to 150
300
Watts
°C
Amps
Volts
@ T
C
= 25°C
Reverse Bias Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1000µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
1200
3
4.5
3.3
3.0
1000
2
6
3.9
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 75A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 75A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
I
CES
I
GES
µA
nA
5-2003
050-7422
Rev B
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
5000
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
