APT77N60JC3
600V 77A 0.035
Ω
Super Junction MOSFET
C OLMOS
O
Power Semiconductors
S
G
D
S
OT
S
2
-2
7
• Ultra low R
DS
(
ON
)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q
g
• Avalanche Energy Rated
• N-Channel Enhancement Mode
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
dv
/
dt
"UL Recognized"
ISOTOP
®
D
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT77N60JC3
UNIT
Volts
Amps
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
600
77
231
±20
±30
568
4.55
-55 to 150
300
50
20
1
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS
= 480V, I
D
= 77A, T
J
= 125°C)
Repetitive Avalanche Current
Repetitive Avalanche Energy
7
7
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
I
AR
E
AR
E
AS
Single Pulse Avalanche Energy
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 500µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
600
.030
1.0
0.035
50
500
±200
2.1
3
3.9
(V
GS
= 10V, I
D
= 60A)
Ohms
µA
nA
Volts
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V, T
J
= 150°C)
Gate-Source Leakage Current (V
GS
= ±20V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5.4mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS
™
comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
050-7146 Rev E
6-2004
ADPOW [ ADVANCED POWER TECHNOLOGY ]
