APT80GP60J
600V
POWER MOS 7 IGBT
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
®
E
G
C
E
OT
S
2
-2
7
"UL Recognized"
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 400V, 39A
• 50 kHz operation @ 400V, 59A
• SSOA rated
ISOTOP
®
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT80GP60J
UNIT
600
±20
±30
151
68
330
330A @ 600V
462
-55 to 150
300
Watts
°C
Amps
Volts
@ T
C
= 25°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
3
4.5
2.2
2.1
1.0
2
6
2.7
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
I
CES
I
GES
mA
nA
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
5
11-2003
050-7426
Rev B
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com