APT80GP60B2
600V
POWER MOS 7 IGBT
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
T-Max
TM
®
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 200 kHz operation @ 400V, 45A
• 100 kHz operation @ 400V, 72A
• SSOA rated
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
1
7
7
All Ratings: T
C
= 25°C unless otherwise specified.
APT80GP60B2
UNIT
600
±20
±30
@ T
C
= 25°C
@ T
C
= 110°C
Volts
100
100
330
330A @ 600V
1041
-55 to 150
300
Watts
°C
Amps
@ T
C
= 25°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
3
4.5
2.2
2.1
1.0
2
6
2.7
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
I
CES
I
GES
mA
nA
10-2003
050-7425
Rev B
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
5
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ADPOW [ ADVANCED POWER TECHNOLOGY ]
