140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
BFR96
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
BFR96G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
•
•
•
High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA
Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz
Macro T
(STYLE #2)
DESCRIPTION:
Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
15
20
3.0
100
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 100ºC
Derate above 100ºC
500
10
mWatts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
ADPOW [ ADVANCED POWER TECHNOLOGY ]
