140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MMBR911LT1
NPN SILICON
LOW NOISE, HIGH-FREQUENCY TRANSISTOR
MMBR911LT1G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
DESCRIPTION:
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic package. This
small–signal plastic transistor offers superior quality and performance
at low cost.
FEATURES:
•
•
•
•
High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
•
MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D(max)
T
STG
T
Jmax
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation @ T
case
= 75°C (1)
Derate linearly above T
case
= 75°C
Storage Temperature
Maximum Junction Temperature
Value
12
20
2.0
60
333
4.44
-55 to +150
150
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
ºC
ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
ADPOW [ ADVANCED POWER TECHNOLOGY ]
