140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF557
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
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•
•
•
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Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 8 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
MRF557G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Power Macro
Designed primarily for wideband large signal stages in
the UHF frequency range.
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
16
30
3.0
500
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75
°C
Derate above 75
°C
3.0
40
Watts
mW/
°C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005