MS2207
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
Features
•
•
•
•
•
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1090 MHz
50 VOLTS
15:1 VSWR CAPABILITY
INPUT / OUTPUT MATCHING
P
OUT
= 400 WATTS
G
P
= 8.0 dB MINIMUM
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2207 is a high power NPN bipolar transistor
specifically designed for TCAS and Mode-S driver
applications. This device is designed for operation
under moderate pulse width and duty cycle pulse
conditions and is capable of withstanding 15:1 output
VSWR at rated conditions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C)
°
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
Value
880
24
55
200
-65 to +200
Unit
W
A
V
°
C
°
C
Power Dissipation
Device Current
Collector Supply Voltage
Junction Temperature
Storage Temperature
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance
0.17
°
C/W
053-7113 Rev - 11-2002
ADPOW [ ADVANCED POWER TECHNOLOGY ]
