140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2211
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
•
•
•
•
•
960-1215 MHz
COMMON BASE
GOLD METALLIZATION
POUT = 6 W MIN. WITH 9.3 dB GAIN
5:1 VSWR CAPABILITY
DESCRIPTION:
:
The MS2211 is a silicon NPN bipolar device designed
For specialized avionics applications, including JTIDS, utilizing pulse
formats with short pulse widths and high burst rates or overall duty
cycles.
The MS2211 is housed in a hermetic package and utilizes internal
input impedance matching. Gold metallization and emitter ballasting
assures high reliability under operating conditions.
A
BSOLUTE MAXIMUM RATINGS
(Tcase = 25°C)
°
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Device Current*
Collector-Supply Voltage
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Parameter
Power Dissipation* (T
C
≤
75°C)
°
Value
25
0.9
32
+250
-65 to +200
Unit
W
A
V
°
C
°
C
Thermal Data
R
TH(J-C)
Junction-case Thermal Resistance*
7.0
°
C/W
* Applies only to rated RF amplifier operation
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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WWW.ADVANCEDPOWER.COM
or contact our factory direct.
ADPOW [ ADVANCED POWER TECHNOLOGY ]
