SD1127 参数 Datasheet PDF下载

SD1127

RF & MICROWAVE TRANSISTORS

VHF FM MOBILE APPLICATIONS

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Features

175 MHz

12.5 VOLTS

P

OUT

= 4.0 W MINIMUM

G

P

= 12.0 dB

GROUNDED EMITTER

1. Collector

2. Base

3. Emitter

TO-39

DESCRIPTION:

The SD1127 is a epitaxial silicon NPN transistor designed

primarily for VHF mobile communications. The chip of this

transistor is mounted on a beryllia pill to isolate the collector

lead and ground the emitter lead for high gain performance

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C)

Symbol

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

tot

T

STG

T

J

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter – Base Voltage

Collector Current

Total Power Dissipation

Storage Temperature

Junction Temperature

Value

36

18

36

4.0

.64

8.0

-65 + 200

+200

Unit

V

V

V

V

A

W

°C

°C

Thermal Data

R

TH(J-C)

Junction-case Thermal Resistance

21.9

°C/W

SD1127 – RevB 2/06

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

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