140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
SD1422
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
Features
•
•
•
•
•
470 MHz
12.5 VOLTS
P
OUT
=
25.0 WATTS
G
P
= 6.2 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1429-03 is an epitaxial silicon NPN planar transistor
designed for broadband applications in the 450-512MHz land
Mobile radio band. This device utilizes diffused emitter
resistors to withstand 20:1 VSWR at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C)
°
Symbol
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Value
36
18
36
4.0
7.5
70.0
+200
-65 to +150
Unit
V
V
V
V
W
A
°
C
°
C
THERMAL DATA
DATA
R
TH(J-C)
Thermal Resistance Junction-case
2.5
°
C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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WWW.ADVANCEDPOWER.COM
or contact our factory direct.