欢迎访问ic37.com |
会员登录 免费注册
发布采购

PDB-C109 参数 Datasheet PDF下载

PDB-C109图片预览
型号: PDB-C109
PDF下载: 下载PDF文件 查看货源
内容描述: 蓝光电导增强硅光电二极管 [Blue Enhanced Photoconductive Silicon Photodiode]
分类和应用: 光电二极管光电二极管
文件页数/大小: 1 页 / 97 K
品牌: ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
   
Blue Enhanced Photoconductive Silicon Photodiode
PDB-C109
PACKAGE DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
Ø.555 [14.10]
Ø.545 [13.84]
Ø.490 [12.45]
Ø.480 [12.19]
.215 [5.46]
.065 [1.65]
ANODE
2X Ø.018 [0.46]
79°
VIEWING
Ø.449 [11.40] ANGLE
Ø.444 [11.28]
.295 [7.49]
CATHODE
.016 [0.41] MAX
GLASS ABOVE CAP TOP EDGE
2X 1.50 [38.1]
CHIP DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
.341 [8.66]
.231 [5.87]
.209 [5.31] ACTIVE AREA
TO-8 PACKAGE
TO-8 PACKAGE
.319 [8.10]
ACTIVE AREA
FEATURES
Low noise
Blue enhanced
High shunt resistance
High response
DESCRIPTION
The
PDB-C109
is a blue enhanced PIN silicon
photodiode in a photoconductive mode, packaged in
a TO-8 package.
APPLICATIONS
• Instrumentation
• Industrial
• Medical
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
V
BR
T
STG
T
O
T
S
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
-55
-40
75
+150
+125
+240
V
°C
°C
°C
Responsivity (A/W)
SPECTRAL RESPONSE
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
Wavelength (nm)
1150
SYMBOL
PARAMETER
MIN
MAX
UNITS
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
I
SC
I
D
R
SH
C
J
lrange
R
V
BR
NEP
t
r
CHARACTERISTIC
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Responsivity
Breakdown Voltage
Noise Equivalent Power
Response Time**
TEST CONDITIONS
H = 100 fc, 2850 K
V
R
= 10V
V
R
= 10 mV
V
R
=10 V,
f
= 1 MHz
Spot Scan
l=
450 nm V, V
R
= 0 V
I = 10
μA
V
R
= 0V @
l=Peak
RL = 50
Ω,V
R
= 0 V
RL = 50
Ω,V
R
= 10 V
MIN
450
30
350
0.15
30
TYP
500
5
100
120
0.17
50
5x10
-13
190
13
MAX
15
UNITS
µA
nA
MΩ
pF
nm
A/W
V
W/
Hz
nS
1100
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
www.advancedphotonix.com