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PDB-C232 参数 Datasheet PDF下载

PDB-C232图片预览
型号: PDB-C232
PDF下载: 下载PDF文件 查看货源
内容描述: 增强的蓝线阵硅光电二极管 [Blue Enhanced Linear Array Silicon Photodiode]
分类和应用: 光电二极管光电二极管
文件页数/大小: 1 页 / 116 K
品牌: ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
   
Blue Enhanced Linear Array Silicon Photodiode
PDB-C232
PACKAGE DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
.205 [5.20]
.350 [8.88]
34
.705 [17.91]
.695 [17.65]
ELEMENT 1
COMMON
CATHODE
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
1.705 [43.31]
1.695 [43.05]
1.291 [32.78]
.282 [7.16]
COMMON
CATHODE
18
.220 [5.59]
.140 [3.56]
34X Ø.018 [0.46]
ELEMENT 32
.400 [10.16]
.600 [15.24]
17
.150 [3.81]
.050 [1.27]
PIN CONNECTIONS
ELEMENT NO.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
PIN NO.
34
2
33
3
32
4
31
5
30
6
29
7
28
8
27
9
26
ELEMENT NO.
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
CATHODE
CATHODE
PIN NO.
10
25
11
24
12
23
13
22
14
21
15
20
16
19
17
1
18
.050 [1.27]
.100 [2.54] TYP
CHIP DIMENSIONS INCH [mm]
.025 [0.64]
.040 [1.02] PITCH
CHIP DIMENSIONS INCH [mm]
.103 [2.62]
32X .065 [1.65]
ACTIVE AREA
TO-46 PACKAGE
PCB PACKAGE
31X .005 [0.13] GAP
32X .035 [0.89] ACTIVE AREA
FEATURES
Blue enhanced
• Uniform outputs ± 5%
• Low crosstalk ± 2%
DESCRIPTION
The
PDB-C232
is a blue enhanced 32 element linear
array silicon photodiode packaged in a PCB with a
terminal strip and flat glass window.
APPLICATIONS
• Spectrometers
• Baggage scanners
• Characters recognition
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
V
BR
T
STG
T
O
T
S
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
-40
-40
50
+100
+75
+240
V
°C
°C
°C
Responsivity (A/W)
SPECTRAL RESPONSE
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
Wavelength (nm)
1150
SYMBOL
PARAMETER
MIN
MAX
UNITS
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
I
SC
I
D
R
SH
C
J
lrange
V
BR
NEP
t
r
CHARACTERISTIC
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Breakdown Voltage
Noise Equivalent Power
Response Time**
TEST CONDITIONS
H = 100 fc, 2850 K
V
R
= 5V
V
R
= 10 mV
V
R
=10 V,
f
= 1 MHz
Spot Scan
I = 10
μA
V
R
= 0V @
l=Peak
RL = 50
Ω,V
R
= 0 V
RL = 50
Ω,V
R
= 10 V
MIN
7.5
100
350
30
TYP
11
1
250
30
75
1x10
-14
190
13
MAX
10
UNITS
µA
nA
MΩ
pF
nm
V
W/
Hz
nS
1100
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
www.advancedphotonix.com