Solderable Silicon Photodiodes
PDB-C601-1
PACKAGE DIMENSIONS
[mm]
[mm]
CHIP DIMENSIONS INCH
INCH
.030 [0.76]
.021 [0.53]
.014 [0.36]
.040 [1.02]
.125 [3.18]
.074 [1.88]
ACTIVE AREA
CHIP DIMENSIONS INCH [mm]
.022 [0.56] ACTIVE AREA
SOLDERABLE PHOTODIODE
BARE SHIP PACKAGE
FEATURES
DESCRIPTION
•
•
•
•
APPLICATIONS
Optical encoder
Position sensor
Industrial controls
Instrumentation
•
Red enhanced
The
PDB-C601-1
is a silicon red enhanced
• Photocondutctive
solderable photodiode designed for low capacitance
• High quantum efficiency and high speed for photoconductive applications.
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
V
BR
T
STG
T
O
T
S
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
-40
-40
75
+125
+100
+224
V
°C
°C
°C
Responsivity (A/W)
SPECTRAL RESPONSE
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
Wavelength (nm)
1150
SYMBOL
PARAMETER
MIN
MAX
UNITS
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
I
SC
I
D
R
SH
C
J
lrange
V
BR
NEP
t
r
CHARACTERISTIC
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Breakdown Voltage
Noise Equivalent Power
Response Time
TEST CONDITIONS
H = 100 fc, 2850 K
V
R
= 5 V
V
R
= 10 mV
V
R
= 5 V,
f
= 1 MHz
Spot Scan
I = 10
μA
V
R
= 0V @
l=Peak
RL = 1KΩ,V
R
= 5V
MIN
15
60
350
25
TYP
17
0.5
150
10
50
1x10
-14
10
MAX
2
UNITS
μA
nA
MW
pF
nm
V
W/
√
Hz
nS
1100
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
www.advancedphotonix.com
ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
