GaAlAs High power IR LED Emitters
(660nm/940nm)
PDI-E833
.063 [1.60]
.167 [4.24]
C
L
.104 [2.64]
C
L
PACKAGE DIMENSIONS INCH [mm]
.055 [1.40]
RED L.E.D. CHIP
I.R. L.E.D. CHIP
.025 [0.64]
.060 [1.52]
C
L
WIRE BONDS
METALIZED
CERAMIC
.250 [6.35]
ENCAPSOLATE
CONTACT B
CONTACT A
Metalized Ceramic Package
FEATURES
• Low Cost
• 660 nm +/- 3nm
• 2 drive line
DESCRIPTION
The
PDI-E833
is a two drive line dual emitter
oximeter component. The 660 and 940nm GaAlAs
infrared emitters are mounted in a glob toped low
cost ceramic SMT package. The LEDs are bias
separately by alternating polarity on the bias pins.
APPLICATIONS
• Oximeter Probes
• Finger Clamps
• Reusable probes
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL PARAMETER
P
d
I
f
I
p
V
r
T
STG
T
O
T
S
Power Dissipation
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
-40
-40
MIN
MAX
250
30
200
4
+80
+80
+240
UNITS
mW
mA
mA
V
°C
°C
°C
SCHEMATIC
A
660 nm
LED
940 nm
LED
B
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
P
o
Iv
V
f
V
r
l
p
CHARACTERISTIC
Radiant Flux
Luminous Intensity
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Spectral Halfwidth
Rise Time
Fall Time
TEST CONDITIONS
I
f
= 20 mA
I
f
= 20 mA
I
f
= 20 mA
I
f
= 10
μA
I
f
= 20 mA
I
f
= 20 mA
I
f
= 20 mA
I
f
= 20 mA
660 nm
MIN TYP MAX
1.8
2.4
20
30
1.8
2.4
5
658
661
664
25
0.8
0.8
940 nm
MIN TYP MAX
1.2 1.8
1.3
5
930
940
50
0.8
0.8
1.5
950
UNITS
mW
mcd
V
V
nm
nm
uS
uS
Δ
l
t
r
t
f
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
www.advancedphotonix.com
ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
