UV Enhanced GaN Detectors
Advanced Photonix, Inc.
PDU-G102B
PACKAGE DIMENSIONS INCH [mm]
Ø.210 [5.35]
.055 [1.40]
2X Ø.017
[0.43]
CATHODE
VIEWING
ANGLE
Ø .118 [3.00]
61°
ANODE
.100 [2.54]
Ø.181 [4.60]
CHIP
.087 [2.21]
.500
[12.70]
CHIP DIMENSIONS INCH [mm]
.016 [0.40] SQ
.0134 [0.340]
TO-46 PACKAGE
.0126 [0.320]
ACTIVE AREA = 0.076 mm ²
FEATURES
•
•
•
•
320nm UVB response
Visible & NIR blind
Photovoltaic operation
High shunt resistance
DESCRIPTION
The
PDU-G102B
is a GaN UV photodiode with a
spectral range from 200nm to 320nm and is ideal for
UVB sensing applications available in a TO-46 can
package.
1.000
APPLICATIONS
•
•
•
•
UVB power meters
Sun dosimeters
UV epoxy curing
UV instrumentation
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
V
BR
T
STG
T
O
T
S
PARAMETER
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
-40
-30
MIN
MAX
5
+90
+85
+260
UNITS
Responsivity (A/W)
SPECTRAL RESPONSE
V
°C
°C
°C
0.100
0.010
0.001
* 1/16 inch from case for 3 seconds max.
0.000
230
240
250
260
270
280
290
300
310
320
330
340
350
360
370
380
390
400
Wavelength (nm )
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
I
SC
I
D
R
SH
C
J
lrange
R
V
BR
t
r
CHARACTERISTIC
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Responsivity
Breakdown Voltage
Response Time
TEST CONDITIONS
UVI = 1
V
R
= 1V
V
R
= 10 mV
V
R
= 0V,
f
= 1 MHz
Spot Scan
l=
350nm V, V
R
= 0 V
I = 1μA
RL = 1KΩ,V
R
= 1V
MIN
TYP
1
0.05
1
24
0.10
10
10
MAX
1
UNITS
nA
nA
GW
pF
nm
A/W
V
nS
0.45
200
320
15
© 2007 Advanced Photonix, Inc. All rights reserved. Specifications and output data subject to change without notice.
Advanced Photonix, Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
REV 4/19/07
ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
