Small Area Silicon Avalanche Photodiode
SD 036-70-62-531
PACKAGE DIMENSIONS INCH
/
mm
TO-5 PACKAGE
CHIP DIMENSIONS INCH [mm]
FEATURES
•
•
•
•
Low noise
Small size
High Speed
Low cost
DESCRIPTION
The
SD 036-70-62-531
is a 0.9 mm diameter small
area silicon avalanche photodiode (APD) that
provides high gain and low noise, packaged in a
hermetic TO-5 metal can with a flat window.
80
70
Responsivity (A/W)
APPLICATIONS
• Military
• Industrial
• Medical
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
V
BR
T
STG
T
O
T
S
PARAMETER
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
MIN
130
-40
-40
MAX
280
+85
+55
+240
UNITS
V
°C
°C
°C
60
50
40
30
20
10
0
400
450
SPECTRAL RESPONSE
80
70
60
50
40
30
R
500
550
600
650
700
750
800
850
QE
1000
1050
1100
900
950
20
10
0
* 1/16 inch from case for 3 seconds max.
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C and gain of 100 at 820nm UNLESS OTHERWISE NOTED
SYMBOL
I
D
C
J
I
N
lrange
R
Vop
t
r
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
7
0.12
400
30
47
130
RL = 50
Ω,
l=
675nm
2
280
1100
MAX
30
10
UNITS
nA
pF
pA/√Hz
nm
A/W
V
nS
Dark Current
Junction Capacitance
f
= 1 MHz
Noise Current Spectral Density f = 100 kHz
Spectral Application Range
Spot Scan
l=
660nm, V
R
= 0 V
Responsivity
l=
830nm, V
R
= 0 V
Operating voltage
Response Time**
**Response time of 10% to 90% is specified at 820nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
(TA)= 23°C and Gain = 100 at 830nm UNLESS OTHERWISE
ELECTRO-OPTICAL CHARACTERISTICS RATING
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
www.advancedphotonix.com
ADVANCEDPHOTONIX [ ADVANCED PHOTONIX, INC. ]
