AEGIS
SEMICONDUTORES LTDA.
A1C:240S.XX.05
VOLTAGE RATINGS
Part Number
V
RRM
, VR – (V)
rep. peak reverse voltage
TJ = 0 to 150 C
A1C:240S.02.05
A1C:240S.04.05
A1C:240S.06.05
A1C:240S.08.05
A1C:240S.10.05
A1C:240S.12.05
200
400
600
800
1000
1200
O
Max. V
RSM
, V
R
– (V) Max. non-
rep. peak reverse voltage
O
This datasheet applies to:
Metric thread: A1C:240S.XX.05,
A1D:240S.XX.05
Inch thread: A2C:240S.XX.05,
A2D:240S.XX.05
TJ = -40 to 0 C
200
400
600
800
1000
1200
TJ = 25 to 150 C
300
500
700
900
1100
1300
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER
T
J
Junction Temperature
T
stg
Storage Temperature
I
F(AV)
Max. Av. current
@ Max. T
C
VALUE
-40 to 150
-40 to 150
240
100
380
5.75
I
FSM
Max. Peak non-rep. surge
current
6.27
kA
6.56
7.15
171.00
187
I t Max. I t capability
195
213.00
It
2 1/2
2
2
UNITS
O
O
NOTES
-
-
180
O
half sine wave
-
50 Hz half cycle sine wave
60 Hz half cycle sine wave
50 Hz half cycle sine wave
60 Hz half cycle sine wave
t = 10ms
t = 8.3 ms
Initial T
J
= 125
O
C, rated V
RRM
applied after surge.
C
C
C
A
O
I
F(RMS)
Nom. RMS current
A
Initial T
J
= 125
O
C, no voltage
applied after surge.
Initial T
J
= 125
O
rated V
RRM
C,
applied after surge.
O
kA s
t = 10ms
t = 8.3 ms
As
2 1/2
2
Initial T
J
= 125 C, no voltage
applied after surge.
2
Max. I t
2 1/2
capability
2340
1
25
240
50
30
Initial T
J
= 125
O
C, no voltage applied after surge.
for time t
x
= I t
T
J
= 25
O
C
2 1/2
It
* tx1/2. (0.1 < tx < 10ms).
I
RRM
Maximum peak reverse
current at rated V
RRM
.
I
RM
Peak reverse recovery current
I
FM
Peak forward current
di/dt Max. Non-repetitive rate-of-
rise current
F Mounting Force
mA
A
A
A/ms
N.m
T
J
= 25 C, V
D
= V
DRM
, I
FM
= 240A.
-
O
AEGIS [ AEGIS SEMICONDUTORES LTDA ]
