DC Characteristics – CMOS Compatible
(T
A
= -55°C to +125°C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
+3.3V V
CC
(1)
Parameter
V
PP
Deep Power Down Current
V
PP
Read Current
V
PP
Write Current
Sym
I
PPD
I
PPR
I
PPW
1
I
PPW
2
V
PP
Erase Current
I
PPE
1
I
PPE
2
V
PP
Erase Suspend Current
RP Boot Block Unlock Current
Output Low Voltage
Output High Voltage
I
PPES
I
RP
V
OL
V
OH
1
V
OH
2
V
PP
Lock-Out Voltage
V
PP
(Program/Erase Operations)
V
PP
(Program/Erase Operations)
V
CC
Erase/Write Lock Voltage
RP Unlock Voltage
V
PPLK
V
PPH
1
V
PPH
2
V
LKO
V
HH
RP = GND ± 0.2V
V
PP
> V
PPH
2
V
PP
= V
PPH
1
(at 5V), Word Write in Progress (x32)
V
PP
= V
PPH
2
(at 12V), Word Write in Progress (x32)
V
PP
= V
PPH
1
(at 5V), Block Erase in Progress
V
PP
= V
PPH
2
(at 12V), Block Erase in Progress
V
PP
= V
PPH
,
Block Erase Suspend in Progress
RP = V
HH
, V
PP
= 12V
V
CC
= V
CC
Min., I
OL
= 5.8 mA (5V), 2 mA (3.3V)
V
CC
= V
CC
Min., I
OH
= -2.5 mA
V
CC
= V
CC
Min., I
OH
= -100 µA
Complete Write Protection
V
PP
= at 5V
V
PP
= at 12V
Locked Condition
Boot Block Write/Erase, V
PP
= 12V
0.85 x
V
CC
V
CC
-
0.4V
0.0
4.5
11.4
0
11.4
1.5
5.5
12.6
2.0
12.6
Conditions
Typical
Min
Max
40
800
120
100
120
100
800
2
0.45
+5.0V V
CC
Standard
Min
Max
40
800
120
100
100
80
800
2
0.45
0.85 x
V
CC
V
CC
-
0.4V
0.0
4.5
11.4
0
11.4
1.5
5.5
12.6
2.0
12.6
µA
µA
mA
mA
mA
mA
µA
mA
V
V
V
V
V
V
V
V
Units
Notes:
1. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not tested).
AC Characteristics – Write/Erase/Program Operations – WE Controlled
(T
A
= -55°C to +125°C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Symbol
Parameter
JEDEC
Standard
t
AVAV
t
PHWL
t
ELWL
t
PHHWH
t
VPWH
t
AVWH
t
DVWH
t
WLWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHQV
1
t
WHQV
2
t
WHQV
3
t
WHQV
4
+3.3V V
CC
Typical
120nS
Min Max
120
1.5
0
200
200
90
70
90
0
0
0
30
6
0.3
0.3
0.6
0
0
(2)
+4.5V to +5.5V V
CC
80nS
Min Max
80
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100nS
Min Max
100
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100
100
120nS
Min Max
120
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100
nS
µS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
Sec
Sec
Sec
nS
nS
nS
Units
Write Cycle Time
RP High Recovery to WE Going Low
CE Setup to WE Going Low
Boot Block Unlock Setup to WE Going High
(1)
V
PP
Setup to WE Going High
(1)
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold Time from WE High
Address Hold Time from WE High
CE Hold Time from WE High
WE Pulse Width High
Duration of Word Write Operation
(1)
(x32)
Duration of Erase Operation (Boot)
(1)
Duration of Erase Operation (Parameter)
(1)
Duration of Erase Operation (Main)
(1)
V
PP
Hold from Valid SRD
(1)
RP V
HH
Hold from Valid SRD
(1)
Boot Block Lock Delay
(1)
t
QVVL
t
QVPH
t
PHBR
200
Notes:
1. Guaranteed by design, not tested.
2. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not tested).
Aeroflex Circuit Technology
4
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
