ACT-S512K32V High Speed 3.3Volt
16 Megabit SRAM Multichip Module
Features
4 Low Power CMOS 512K x 8 SRAMs in one MCM
s
Overall configuration as 512K x 32
s
Input and Output TTL Compatible
s
17, 20, 25, 35 & 45ns Access Times, 15ns Available by
Special Order
s
Full Military (-55°C to +125°C) Temperature Range
s
+3.3V Power Supply
s
Choice of Surface Mount or PGA Type Co-fired Packages:
s
www.aeroflex.com/act1.htm
CIRCUIT TECHNOLOGY
General Description
The ACT–S512K32V is a High
Speed 4 megabit CMOS SRAM
Multichip
Module
(MCM)
designed for full temperature
range, 3.3V Power Supply,
military, space, or high reliability
mass memory and fast cache
applications.
The MCM can be organized
as a 512K x 32 bits, 1M x 16
bits or 2M x 8 bits device and is
input
and
output
TTL
compatible. Writing is executed
when the write enable (WE)
and chip enable (CE) inputs are
low. Reading is accomplished
when WE is high and CE and
output enable (OE) are both
low. Access time grades of
17ns, 20ns, 25ns, 35ns and
45ns maximum are standard.
The products are designed for
operation over the temperature
range of -55°C to +125°C and
screened under the full military
environment. DESC Standard
Military Drawing (SMD) part
numbers are pending.
The
ACT-S512K32V
is
manufactured in Aeroflex’s
80,000ft
2
MIL-PRF-38534
certified facility in Plainview,
N.Y.
68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max
thickness available, contact factory for details)
(Drops into the
68 Lead JEDEC .99"SQ CQFJ footprint)
q
66–Pin, PGA-Type (P1), 1.38"SQ x .245"max
q
66–Pin, PGA-Type (P7), 1.08"SQ x .185"max
q
Internal Decoupling Capacitors
s
DESC SMD# Pending
s
Block Diagram – PGA Type Package(P1,P7) & CQFP(F2)
WE
1
CE
1
WE
2
CE
2
WE
3
CE
3
WE
4
CE
4
A
0
– A
18
OE
512Kx8
512Kx8
512Kx8
512Kx8
8
I/O
0-7
8
I/O
8-15
8
I/O
16-23
8
I/O
24-31
Pin Description
I/O
0-31
Data I/O
A
0–18
Address Inputs
WE
1–4
CE
1–4
OE
V
cc
GND
NC
Write Enables
Chip Enables
Output Enable
Power Supply
Ground
Not Connected
eroflex Circuit Technology - Advanced Multichip Modules © SCD3360 REV B 12/17/98