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ACT-S512K8N-045F3M 参数 Datasheet PDF下载

ACT-S512K8N-045F3M图片预览
型号: ACT-S512K8N-045F3M
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- S512K8高速4兆位单片SRAM [ACT-S512K8 High Speed 4 Megabit Monolithic SRAM]
分类和应用: 静态存储器
文件页数/大小: 8 页 / 86 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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AC Characteristics
(V
CC
= 5.0V, V
SS
= 0V, Tc= -55°C to +125°C)
Read Cycle
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change
Output Enable to Output Valid
Chip Select to Output in Low Z (1)
Output Enable to Output in Low Z (1)
Chip Deselect to Output in High Z (1)
Output Disable to Output in High Z (1)
Note 1. Guaranteed by design, but not tested
Sym
–017
–020
–025
–035
–045
–055
Min Max Min Max Min Max Min Max Min Max Min Max
17
-
-
0
-
2
0
-
-
-
17
17
-
9
-
-
9
9
20
-
-
0
-
2
0
-
-
-
20
20
-
10
-
-
10
10
25
-
-
0
-
2
0
-
-
-
25
25
-
12
-
-
12
12
35
-
-
0
-
4
0
-
-
-
35
35
-
25
-
-
15
15
4
0
-
-
45
-
-
0
-
45
45
-
25
-
-
20
20
4
0
-
-
55
-
-
0
-
55
55
-
25
-
-
20
20
Units
t
RC
t
AA
t
ACS
t
OH
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle
Parameter
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write (1)
Write to Output in High Z (1)
Data Hold from Write Time
Note 1. Guaranteed by design, but not tested
Sym
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
t
WHZ
t
DH
–017
–020
–025
–035
–045
–055
Min Max Min Max Min Max Min Max Min Max Min Max
17
15
15
12
14
2
0
0
-
0
-
-
-
-
-
-
-
-
9
-
20
15
15
12
14
2
0
0
-
0
-
-
-
-
-
-
-
-
9
-
25
20
20
15
15
2
0
0
-
0
10
-
-
-
-
-
-
-
-
35
25
25
20
25
2
0
0
-
0
15
-
-
-
-
-
-
-
-
45
35
35
25
35
2
5
5
-
0
-
-
-
-
-
-
-
-
20
-
55
50
50
25
40
2
5
5
-
0
-
-
-
-
-
-
-
-
25
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Data Retention Electrical Characteristics (Special Order Only)
(Tc = -55°C to +125°C)
Test Conditions
CE
V
CC
– 0.2V
V
CC
= 3V
Parameter
V
CC
for Data Retention
Sym
V
DR
ALL SPEEDS
Min
Typ
Max
2
-
-
0.5
5.5
7.0
Units
V
mA
Data Retention Current (1) I
CCDR1
Available in Low Power version. Call For Information.
Truth Table
Mode
Standby
Read
Output Disable
Write
Aeroflex Circuit Technology
CE
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
Data I/O
High Z
Data Out
High Z
Data In
3
Power
Standby (deselect/power down)
Active
Active (deselected)
Active
SCD1664 REV C 5/10/00
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