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ACT-S512K8N-045F4C 参数 Datasheet PDF下载

ACT-S512K8N-045F4C图片预览
型号: ACT-S512K8N-045F4C
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- S512K8高速4兆位单片SRAM [ACT-S512K8 High Speed 4 Megabit Monolithic SRAM]
分类和应用: 静态存储器
文件页数/大小: 8 页 / 86 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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Timing Diagrams
Read Cycle Timing Diagrams
Read Cycle 1 (CE = OE = V
IL
, WE = V
IH
)
t
RC
A
0-18
t
AA
t
OH
D
I/O
Previous Data Valid
Data Valid
CE
t
AS
WE
S
EE
N
OTE
Write Cycle Timing Diagrams
Write Cycle 1 (WE Controlled, OE = V
IL
)
t
WC
A
0-16
t
AW
t
CW
t
AH
t
WP
S
EE
N
OTE
t
OW
t
WHZ
t
DW
Data Valid
t
DH
D
I/O
Read Cycle 2 (WE = V
IH
)
t
RC
A
0-18
t
AA
CE
t
ACS
t
CLZ
S
EE
N
OTE
Write Cycle 2 (CE Controlled, OE = V
IH
)
t
WC
A
0-18
t
AW
t
CHZ
S
EE
N
OTE
t
AH
t
CW
t
AS
CE
OE
t
WP
t
OE
t
OLZ
S
EE
N
OTE
t
OHZ
S
EE
N
OTE
WE
t
DW
D
I/O
Data Valid
t
DH
D
I/O
High Z
Data Valid
UNDEFINED
DON’T CARE
Note: Guaranteed by design, but not tested.
AC Test Circuit
Current Source
I
OL
Parameter
To Device Under Test
C
L
=
50 pF
I
OH
Current Source
V
Z
~ 1.5 V (Bipolar Supply)
Typical
0 – 3.0
5
1.5
Units
V
ns
V
Input Pulse Level
Input Rise and Fall
Input and Output Timing Reference Level
Notes:
1) V
Z
is programmable from -2V to +7V. 2) I
OL
and I
OH
programmable from 0 to 16 mA. 3) Tester Impedance
Z
O
= 75
Ω. 4)
V
Z
is typically the midpoint of V
OH
and V
OL
. 5) I
OL
and I
OH
are adjusted to simulate a typical resistance
load circuit. 6) ATE Tester includes jig capacitance.
Aeroflex Circuit Technology
4
SCD1664 REV C 5/10/00
Plainview NY (516) 694-6700