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ACT-SF2816N-26P7Q 参数 Datasheet PDF下载

ACT-SF2816N-26P7Q图片预览
型号: ACT-SF2816N-26P7Q
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- SF2816高速128Kx16 SRAM / FLASH 512Kx16多芯片模块 [ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 185 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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Write/Erase/Program Operation for Flash Memory, FCE Controlled
Data Polling
Addresses
5555H
t
WC
FCE
t
GHWL
OE
t
CP
FWE
t
WS
t
CPH
t
DH
AOH
Data
t
DS
PD
D7
D
OUT
t
WHWH
1
t
AS
PA
t
AH
PA
5.0V
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Aeroflex Circuit Technology
8
SCD3853 REV B 5/18/99 Plainview NY (516) 694-6700