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ACT-SF41632N-39F2T 参数 Datasheet PDF下载

ACT-SF41632N-39F2T图片预览
型号: ACT-SF41632N-39F2T
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- SF41632高速128Kx32 SRAM /闪存512Kx32多芯片模块 [ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module]
分类和应用: 闪存内存集成电路静态存储器
文件页数/大小: 11 页 / 186 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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Write/Erase/Program Operation for Flash Memory, FCE Controlled
Data Polling
Addresses
5555H
t
WC
FCE
t
GHWL
OE
t
CP
FWE
t
WS
t
CPH
t
DH
AOH
Data
t
DS
PD
D7
D
OUT
t
WHWH
1
t
AS
PA
t
AH
PA
5.0V
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Aeroflex Circuit Technology
8
SCD3851 REV A 5/21/98
Plainview NY (516) 694-6700